A Vertical Transport Geometry for Electrical Spin Injection and Extraction in Si
A Vertical Transport Geometry for Electrical Spin Injection and Extraction in Si
Schottky barriers formed between ferromagnetic metal and Semiconductor are of particular interest for spin injection and detection experiments. Here, we investigate electrical spin polarized carrier injection and extraction in Si using a Co/Si/Ni vertical structure built on a 250 nm thick Si membrane. Current-voltage measurements performed on the devices at low temperatures showed evidence of the conduction being dominated by thermionic field emission, which is believed to be the key to spin injection using Schottky junctions. This, however, proved inconclusive as our devices did not show any magnetoresistance signal even at low temperatures. We attribute this partially to the high resistance-area product in our Schottky contacts at spin injection biases. We show the potential of this vertical Spin-device for future experiments by numerical simulation. The results reveal that by growing a thin highly doped Ge layer at the Schottky junctions the resistancearea products could be tuned to obtain high magnetoresistance.
1565-1568
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Xiaoli
702314b0-2a65-4adb-9ef1-b8c62e8deb9f
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
2009
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Xiaoli
702314b0-2a65-4adb-9ef1-b8c62e8deb9f
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Husain, Muhammad, Li, Xiaoli and de Groot, Kees
(2009)
A Vertical Transport Geometry for Electrical Spin Injection and Extraction in Si.
Solid State Communications, 149, .
Abstract
Schottky barriers formed between ferromagnetic metal and Semiconductor are of particular interest for spin injection and detection experiments. Here, we investigate electrical spin polarized carrier injection and extraction in Si using a Co/Si/Ni vertical structure built on a 250 nm thick Si membrane. Current-voltage measurements performed on the devices at low temperatures showed evidence of the conduction being dominated by thermionic field emission, which is believed to be the key to spin injection using Schottky junctions. This, however, proved inconclusive as our devices did not show any magnetoresistance signal even at low temperatures. We attribute this partially to the high resistance-area product in our Schottky contacts at spin injection biases. We show the potential of this vertical Spin-device for future experiments by numerical simulation. The results reveal that by growing a thin highly doped Ge layer at the Schottky junctions the resistancearea products could be tuned to obtain high magnetoresistance.
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Published date: 2009
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 267414
URI: http://eprints.soton.ac.uk/id/eprint/267414
PURE UUID: ef4c79f9-7359-4e58-a6c0-10f660cb47ba
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Date deposited: 28 May 2009 16:49
Last modified: 15 Mar 2024 03:11
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Author:
Muhammad Husain
Author:
Xiaoli Li
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